Impact of the ground-state 4 symmetry for anisotropic hybridization in the heavy-fermion superconductor CeNiGe

Fujiwara, Hidenori*; Nakatani, Yasuhiro*; Aratani, Hidekazu*; Kanai, Yuina*; Yamagami, Kohei*; Hamamoto, Satoru*; Kiss, Takayuki*; Yamasaki, Atsushi*; Higashiya, Atsushi*; Imada, Shin*; et al.

Physical Review B, 108(16), p.165121_1 - 165121_10, 2023/10

https://doi.org/10.1103/PhysRevB.108.165121

Evaluation of doped potassium concentrations in stacked two-Layer graphene using real-time XPS

Ogawa, Shuichi*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Okigawa, Yuki*; Masuzawa, Tomoaki*; Yoshigoe, Akitaka; Abukawa, Tadashi*; Yamada, Takatoshi*

Applied Surface Science, 605, p.154748_1 - 154748_6, 2022/12

https://doi.org/10.1016/j.apsusc.2022.154748

Immersion of graphene in KOH solution improves its mobility on SiO/Si wafers. This is thought to be due to electron doping by modification with K atoms, but the K atom concentration C in the graphene has not been clarified yet. In this study, the C was determined by XPS analysis using high-brilliance synchrotron radiation. The time evolution of C was determined by real-time observation, and the C before irradiation of synchrotron radiation was estimated to be 0.94%. The C 1s spectrum shifted to the low binding energy side with the desorption of K atoms. This indicates that the electron doping concentration into graphene is decreasing, and it is experimentally confirmed that K atoms inject electrons into graphene.

Electrical properties and energy band alignment of SiO/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000) substrates

Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

https://doi.org/10.1063/5.0095468

The interface properties and energy band alignment of SiO/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO/GaN MOS structures on Ga-polar GaN(0001). Although the SiO/GaN(000) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO/GaN(000) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO/GaN(000) was smaller than that for SiO/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000) substrates for MOS device fabrication.

Impact of nitridation on the reliability of 4H-SiC(110) MOS devices

Nakanuma, Takato*; Kobayashi, Takuma*; Hosoi, Takuji*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 15(4), p.041002_1 - 041002_4, 2022/04

https://doi.org/10.35848/1882-0786/ac5ace

The leakage current and flat-band voltage (VFB) instability of NO-nitrided SiC (110) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler-Nordheim (F-N) current by about 1 MVcm, leading to pronounced leakage current. Synchrotron X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the VFB instability of nitrided a-face MOS devices against electron and hole injection.

Oxidation of anatase TiO(001) surface using supersonic seeded oxygen molecular beam

Katsube, Daiki*; Ono, Shinya*; Takayanagi, Shuhei*; Ojima, Shoki*; Maeda, Motoyasu*; Origuchi, Naoki*; Ogawa, Arata*; Ikeda, Natsuki*; Aoyagi, Yoshihide*; Kabutoya, Yuito*; et al.

Langmuir, 37(42), p.12313 - 12317, 2021/10

https://doi.org/10.1021/acs.langmuir.1c01752

We investigated the oxidation of oxygen vacancies at the surface of anatase TiO(001) using supersonic seeded molecular beam (SSMB) of oxygen. The oxygen vacancies at the top-surface and sub-surface could be eliminated by the supply of oxygen using an SSMB. These results indicate that the interstitial vacancies can be mostly assigned to oxygen vacancies, which can be effectively eliminated by using an oxygen SSMB. Oxygen vacancies are present on the surface of anatase TiO(001) when it is untreated before transfer to a vacuum chamber. These vacancies, which are stable in the as-grown condition, could also be effectively eliminated using the oxygen SSMB.

Oxidation reaction kinetics on transition metal surfaces observed by real-time photoelectron spectroscopy

Ogawa, Shuichi*; Zhang, B.*; Yoshigoe, Akitaka; Takakuwa, Yuji*

Vacuum and Surface Science, 64(5), p.218 - 223, 2021/05

https://doi.org/10.1380/vss.64.218

The oxidation reaction kinetics on Ti(0001) and Ni(111) surfaces were observed by real-time photoelectron spectroscopy using synchrotron radiation to measure the oxidation state and oxide thickness. After the Ti(0001) surface was wholly covered by TiO with a thickness of 1.2 nm, the rapid growth of n-type TiO proceeded through the diffusion of Ti ions to the TiO surface at 400C. A saturation of oxygen uptake on the TiO surface indicates that the O sticking coefficient on the TiO surface is negligibly small and the segregation of Ti to the TiO surface is a trigger to initiate the TiO growth. On the Ni(111) surface at 350C, a thermally stable NiO proceeded preferentially and then the growth of p-type NiO was initiated. The time evolution of NiO thickness was represented by a logarithmic growth model, where the NiO growth is governed by the electron tunneling to the NiO surface.

Development of measurement and analysis techniques in X-ray photoelectron spectroscopy; From NAP-HARPES to 4D-XPS

Toyoda, Satoshi*; Yamamoto, Tomoki*; Yoshimura, Masashi*; Sumida, Hirosuke*; Mineoi, Susumu*; Machida, Masatake*; Yoshigoe, Akitaka; Suzuki, Satoru*; Yokoyama, Kazushi*; Ohashi, Yuji*; et al.

Vacuum and Surface Science, 64(2), p.86 - 91, 2021/02

https://doi.org/10.1380/vss.64.86

We have developed measurement and analysis techniques in X-ray photoelectron spectroscopy. To begin with, time-division depth profiles of gate stacked film interfaces have been achieved by NAP-HARPES (Near Ambient Pressure Hard X-ray Angle-Resolved Photo Emission Spectroscopy) data. We then have promoted our methods to quickly perform peak fittings and depth profiling from time-division ARPES data, which enables us to realize 4D-XPS analysis. It is found that the traditional maximum entropy method (MEM) combined with Jackknife averaging of sparse modeling in NAP-HARPES data is effective to perform dynamic measurement of depth profiles with high precision.

Dynamic observation and theoretical analysis of initial O molecule adsorption on polar and -plane surfaces of GaN

Sumiya, Masatomo*; Sumita, Masato*; Asai, Yuya*; Tamura, Ryo*; Uedono, Akira*; Yoshigoe, Akitaka

Journal of Physical Chemistry C, 124(46), p.25282 - 25290, 2020/11

https://doi.org/10.1021/acs.jpcc.0c07151

The initial oxidation of different GaN surfaces [the polar Ga-face (+c) and N-face (-c) and the nonpolar (100) ()plane] under O molecular beam irradiation was studied by real-time synchrotron radiation X-ray photoelectron spectroscopy and DFT molecular dynamics calculation. The results predict that triplet O either dissociates or chemisorbs at the bridge position on the +c-surface, while on N-terminated -c-surface the O2 molecule only undergoes dissociative chemisorption. On the -GaN surface, although the dissociation of O is dominant, the bond length and angle were found to fluctuate from those of O molecules adsorbed on the polar surfaces. The computational model including both the surface spin and polarity of GaN is useful for understanding the interface between GaN and oxide layers in metal-oxide electronic.

Synchrotron radiation photoelectron spectroscopy study on oxides formed at Ge(100)21 surface in atmosphere

Yoshigoe, Akitaka

Japanese Journal of Applied Physics, 59(SM), p.SMMB05_1 - SMMB05_5, 2020/07

https://doi.org/10.35848/1347-4065/ab8f0b

This study presents the results on synchrotron radiation photoelectron spectroscopy (SR-XPS) analysis of oxides formed in the air on a well-defined clean Ge(100)21 surface prepared in UHV condition. Owing to high energy-resolution SR-XPS, detailed chemical information on Ge oxidation states at the Ge surface was clarified. The result showed that the water vapor in the atmosphere plays an important role to progress slow oxidation of the Ge surface. We believe that the data obtained in this study is valuable for the basic understanding of the formation mechanisms of native oxides at the Ge surfaces.

Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma

Nozaki, Mikito*; Terashima, Daiki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Japanese Journal of Applied Physics, 59(SM), p.SMMA07_1 - SMMA07_7, 2020/07

https://doi.org/10.35848/1347-4065/ab8f0e

AlGaN/GaN metal-oxide-semiconductor (MOS) structures were fabricated by low-power inductively coupled plasma reactive ion etching and chemical vapor deposition of SiO dielectrics on the etched surfaces, and they were systematically investigated by physical and electrical characterizations in an effort to develop a low-damage recessed gate process. The comprehensive research demonstrates the significant advantages of the proposed low-damage recessed gate process for fabricating next-generation AlGaN/GaN MOS-HFET devices.